In situ X-ray studies of the incipient ZnO Atomic Layer Deposition on In0.53Ga0.47As

Pr Hubert Renevier

E.V. Skopin1, L. Rapenne1, J.-L. Deschanvres1, E. Blanquet2, G. Ciatto3, L. Pithan4, D.D. Fong5, M.-I. Richard6, and H. Renevier1

1Univ. Grenoble Alpes, CNRS, Grenoble INP*, LMGP, 38000 Grenoble, France
2Univ. Grenoble Alpes, CNRS, Grenoble INP*, SIMAP, 38000 Grenoble, France
3Synchrotron SOLEIL, L’Orme des Merisiers, Saint-Aubin, F-91192, Gif sur Yvette, France
4European Synchrotron Radiation Facility, 71 Avenue des Martyrs, 38000 Grenoble, France
5Materials Science Division, ANL, 9700 S. Cass Ave., Argonne, Illinois 60439, United States
6Aix-Marseille Université, CNRS, Université de Toulon, IM2NP UMR 7334, F-13397 Marseille, France & European Synchrotron Radiation Facility, F-38043 Grenoble, France *Institute of Engineering Univ. Grenoble Alpes Courriel :


In the microelectronics industry, Atomic Layer Deposition (ALD) is widely employed for the growth of conformal thin films with sub-nanometer thickness control, as it can be performed at the low temperatures compatible with industry specifications. An outstanding problem in the ALD community is understanding how to reproducibly synthesize an ultrathin layer with the desired structural and electronic properties. Achieving this requires precise understanding of the growth mechanisms that take place.

We will report on the fabrication of nanometer thick ZnO films used as tunneling insulators at the metal-In0.53Ga0.47As (InGaAs) heterojunction [1,2]. Exploiting an unique ALD chamber built to mount directly onto an X-ray diffractometer [3,4], we have conducted a suite of in situ synchrotron X-ray experiments to reveal the atomistic and microstructural processes taking place during the growth of ZnO on InGaAs, from 0 to ~10 nm in film thickness.

Although we focus on the ZnO ALD on InGaAs in particular, the results and the techniques we employ are broadly applicable to a wide range of other oxides/semiconductor systems, ultrathin films and lamellar 2D materials, as for instance dichalcogenides.

[1] E. Skopin et al. (2018) Nanoscale 10, 11585.
[2] E. Skopin et al. (2019) Submitted to Phys. Rev. Mat.
[3] R. Boichot et al. (2016) Chem. Mater. 28, 592.
[4] M.-H. Chu et al. (2016). Crystal Growth & Design 16, 5339.