INVITED SPEAKERS (to be confirmed)

KEYNOTE

Dr Maud Vinet, Quantum computing program manager CEA-Leti

We have put a multidisciplinary and multi institutions team which gathers quantum physicists, integration and devices engineers, circuit designers and quantum information engineers. We want to build a quantum processor. We are aiming at delivering prototypes with a 100 qubits within 6 years and at having identified the key scientific and roadblocks for scaling up.
Quantum computing is expected to extend the high performance computing roadmap at the condition of being able to operate a large number of qubits. Si-based QC appears as a promising approach to build a quantum processor; thanks to the size of the qubits, the quality of the quantum gates and the VLSI ability to fabricate billions of closely identical objects.
The quality of Si spin qubits has improved very fast with the introduction of isotopically purified 28Si, as observed by multiple research groups. In this presentation, we will discuss the architectures to design a large scale quantum computer based on Si spin qubits and we will review the associated technological challenges and needs for material development.

Link to her biography

INVITED SPEAKERS

		Molecular Design of Hybrid Dielectrics at the Extreme Limits of Molecular-scale Confinement Pr Reinhold H. Dauskardt Ruth G. and William K. Bowes Professor Materials Science, Mechanical Engineering and Surgery Stanford University and the Stanford School of Medicine ABSTRACT			High-resolution 3D Imaging of BEoL and Advanced Packaging Structures using X-ray Microscopy Pr Ehrenfried Zschech Fraunhofer Institute for Ceramic Technologies and Systems KTS Dresden, Germany ABSTRACT
		New plasma approaches for atomic scale precision etching Dr Nicolas Posseme CEA-LETI, MINATEC Campus Univ. Grenoble Alpes ABSTRACT			In situ X-ray studies of the incipient ZnO Atomic Layer Deposition on In0.53Ga0.47As Pr Hubert Renevier Univ. Grenoble Alpes CNRS, Grenoble INP, LMGP* ABSTRACT
		The role of cryo-CMOS in quantum computers Pr Edoardo Charbon Chair of VLSI EPFL Lausanne Suisse ABSTRACT			Sophisticated Architecture for High Bandwidth Memory (HBM) and High Bandwidth NAND (HBN) with the Bumpless TSV Technology Dr Koji Sakui Principal Scientist, IEEE Fellow Tokyo Institute of Technology, IIR, The WOW Alliance, Yokohama, Japan ABSTRACT
		CEA-Leti in the Chiplet’s race Dr Séverine Cheramy CEA-LETI, MINATEC Campus Univ. Grenoble Alpes ABSTRACT			Introduction to the Class of 2D Materials with a focus to hBN Dr Annick Loiseau LEM, ONERA-CNRS, U. Paris Saclay, Châtillon, France ABSTRACT
		Some issues associated to the formation and stability of contacts in microelectronics: agglomeration, nucleation… Dr D. Mangelinck CNRS, Aix-Marseille Université, IM2NP UMR 7334, Marseille, 13120, France ABSTRACT			Embedded non-volatile-memories (eNVM) Dr Franck Arnaud STMicroelectronics, Crolles, France ABSTRACT
		Interconnect Resistance Evolution Dependence on Material and Structure Dimensions Jonathan Reid Lam Research ABSTRACT

QUANTUM WORKSHOP SPEAKERS

		Materials frontiers to empower quantum computing Dr Giordano Scappucci QuTech and Kavli Institute for Nanoscience, TU Delft ABSTRACT			Topological properties of Andreev states in superconductor-semiconductor hybrid junctions Dr Manuel Houzet CEA–IRIG Grenoble (France) ABSTRACT
		High Impedance Quantum Circuits Dr Ioan Pop Karlsruhe Institute of Technology (Germany) ABSTRACT			Quantum computing with spin qubits in semiconductor: a gate fidelity comparison Dr Elena Ferraro CNR-IMM Agrate Unit (Italy) ABSTRACT
		Large scale optomechanics and nanoresonator applications. Dr Sébastien Hentz CEA-LETI, MINATEC Campus Univ. Grenoble Alpes ABSTRACT			Superconducting Silicon and quantum devices Dr Francesca Chiodi Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N – 91120 Palaiseau, France ABSTRACT
		Shadow Epitaxy for In Situ Growth of Generic Semiconductor/Superconductor Hybrids Thomas Sand Jespersen Niels Bohr Institute / University of Copenhagen ABSTRACT			Nano-optomechanics with ultrasensitive nanowire force sensors Olivier Arcizet Institut Néel / CNRS (France) ABSTRACT