INVITED SPEAKERS (to be confirmed)

KEYNOTE

  Dr Maud Vinet, Quantum computing program manager CEA-Leti

We have put a multidisciplinary and multi institutions team which gathers quantum physicists, integration and devices engineers, circuit designers and quantum information engineers. We want to build a quantum processor. We are aiming at delivering prototypes with a 100 qubits within 6 years and at having identified the key scientific and roadblocks for scaling up.

Quantum computing is expected to extend the high performance computing roadmap at the condition of being able to operate a large number of qubits. Si-based QC appears as a promising approach to build a quantum processor; thanks to the size of the qubits, the quality of the quantum gates and the VLSI ability to fabricate billions of closely identical objects. 
The quality of Si spin qubits has improved very fast with the introduction of isotopically purified 28Si, as observed by multiple research groups. In this presentation, we will discuss the architectures to design a large scale quantum computer based on Si spin qubits and we will review the associated technological challenges and needs for material development.
Link to her biography

INVITED SPEAKERS

 

Molecular Design of Hybrid Dielectrics at the Extreme Limits of Molecular-scale Confinement

Pr Reinhold H. Dauskardt

Ruth G. and William K. Bowes Professor
Materials Science, Mechanical Engineering and Surgery
Stanford University and the Stanford School of Medicine

ABSTRACT

 

High-resolution 3D Imaging of BEoL and Advanced Packaging Structures using X-ray Microscopy

Pr Ehrenfried Zschech

Fraunhofer Institute for Ceramic Technologies and Systems KTS Dresden, Germany

ABSTRACT

New plasma approaches for atomic scale precision etching

Dr Nicolas Posseme

CEA-LETI, MINATEC Campus
Univ. Grenoble Alpes

ABSTRACT

Modern Bow Management for different BEOL stacks and a wide range of pattern densities

Dr Nadine Seifarth

GLOBALFOUNDRIES
Dresden

ABSTRACT

In situ X-ray studies of the incipient ZnO Atomic Layer Deposition on In0.53Ga0.47As

Pr Hubert Renevier

Univ. Grenoble Alpes
CNRS, Grenoble INP*, LMGP

ABSTRACT

The role of cryo-CMOS in quantum computers

Pr Edoardo Charbon

Chair of VLSI
EPFL Lausanne Suisse

ABSTRACT

Sophisticated Architecture for High Bandwidth
Memory (HBM) and High Bandwidth NAND (HBN) with the Bumpless TSV Technology


Dr Koji Sakui

Principal Scientist, IEEE Fellow
Tokyo Institute of Technology, IIR, The WOW Alliance, Yokohama, Japan

ABSTRACT

CEA-Leti in the Chiplet’s race

Dr Séverine Cheramy

CEA-LETI, MINATEC Campus
Univ. Grenoble Alpes

ABSTRACT


New Precursors and Chemistry for the Growth of Metal Films by Thermal Atomic Layer Deposition

Pr. Charles H. Winter

Department of Chemistry, Wayne State University, Detroit
Michigan 48202

ABSTRACT

Introduction to the Class of 2D Materials with a focus to hBN

Dr Annick Loiseau

LEM, ONERA-CNRS, U. Paris Saclay, Châtillon, France


ABSTRACT


Some issues associated to the formation and stability of contacts in microelectronics: agglomeration, nucleation…

Dr D. Mangelinck 

CNRS, Aix-Marseille Université, IM2NP UMR 7334, Marseille, 13120, France

ABSTRACT

Embedded non-volatile-memories (eNVM)

Dr Franck Arnaud

STMicroelectronics, Crolles, France

ABSTRACT


QUANTUM WORKSHOP SPEAKERS


  

Materials frontiers to empower quantum computing

Dr Giordano Scappucci

QuTech and Kavli Institute for Nanoscience, TU Delft

ABSTRACT

 

Topological properties of Andreev states in superconductor-semiconductor hybrid junctions

Dr Manuel Houzet

CEA–IRIG Grenoble (France)

ABSTRACT

High Impedance Quantum Circuits

Dr Ioan Pop

Karlsruhe Institute of Technology (Germany)

ABSTRACT

Quantum computing with spin qubits in semiconductor: a gate fidelity comparison

Dr Elena Ferraro

CNR-IMM Agrate Unit (Italy)

ABSTRACT

Large scale optomechanics and nanoresonator applications.

Dr Sébastien Hentz

CEA-LETI, MINATEC Campus
Univ. Grenoble Alpes

ABSTRACT

Superconducting Silicon and quantum devices

Dr Francesca Chiodi

Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N – 91120 Palaiseau, France

ABSTRACT